bias voltage applied to the metal layer of said insulated gate field effect device.
References Cited
UNITED STATES PATENTS
| 3,135,926 | 6/1964 | Bockemuehl | 330-38 |
| 3,201,574 | 8/1965 | Szekely. | |
| 3,213,299 | 10/1965 | Rogers | 307-88.5 |
| 3,215,859 | 11/1965 | Sorchych | 307-88.5 |
| 3,215,861 | 11/1965 | Sekely | 307-88.5 |
| 3,222,610 | 12/1965 | Evans et al. | 330-38 |
OTHER REFERENCES
REC Tech. Notes, No. 654, November 1965.
JAMES D. KALLAM, Primary Examiner.
JOHN W. HUCKERT, Examiner.
R. SANDLER, Assistant Examiner.
